Power supply systems for air conditioners, PV(Photovoltaic) power system, xEV charging infrastructure, on-board charger. Power loss is reduced by approx. 21% compared to silicon (Si) products, contributing to energy conversion The SiC-SBD allows high frequency switching and contributes to downsizing the reactor, heat sink and other peripheral components JBS structure allows high forward surge capability and contributes to improving reliability

The DIM1000H1HS17-PA500 is a H1 half bridge generation 5 trench gate IGBT module, with insulated gate bipolar transistor (IGBT), enhanced field stop and implantation technology. The 1000A 1700V IGBT module has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. The H1 package outline are designed to scale 250mm x 89mm and weigh 1200g. The module has a chip junction temperature operating range from -40°C to a maximum of 150°C. Suitable for applications within the industrial, renewable, power grid and traction markets. The module incorporates an electrically isolated base plate and low inductance construction, enabling circuit designers to optimize circuit layouts and utilize grounded heat sinks for safety. The IGBT has a high reliability soldering system and solder layer uniformity control technology to strengthen thermal cycling capability. In addition, the product offers ultrasonic terminal welding technology with low impedance, large load capacity and strong resistance to mechanical shock.

MAIN CHARACTERISTICS: Isolated measurement of nominal AC & DC voltage of 1000 V, Compact: 131.6 cm3 total volume, Saving in terms of space: 29 x 51 x 89 mm, Panel mounting, Light: 57 g, Robust, Isolation amplifier technology, High level of overall accuracy over temperature range: 1.7 % and Fast response time: 12 to 17 us at 90%

The newly introduced HiPak IGBT Modules 5SNA 1000J450300 and 5SNA 1500G450300 feature Ultra-low loss SPT++ technology, Very soft switching FCE diode with increased diode area, Exceptional ruggedness and highest current rating, High insulation package, AlSiC base-plate for high power cycling capability, AlN substrate for low thermal resistance and Recognized under UL1557, File E 196689.

Powerex Introduces Gate Driver and DC/DC Converter for SiC Features -Adjustable for most SiC Modules -Dual gate Drive Circuits -Short Circuit detection with soft gate shutdown -Only one power supply necessary

ABB Semiconductors A wide variety of high power semiconductors using conventional and future oriented technologies with high reliability fulfilling the demand of the traction, industry and energy transmission segments. This product portfolio comprises GTOs, IGBTs, IGCTs, Thyristors and Diodes in the power range of 150 A up to 12000 A and 200 V up to 8500 V at the highest levels of quality

Mitsubishi Electric Develops Technology for High-power-density Converters with Embedded Components.Mitsubishi Electric Corporation announced today that it has developed a new technology to integrate power devices, passives, sensors and other embedded components in the same substrate, which the company deployed in a 100kW (continuous) bidirectional DC-DC converter to achieve what is believed to be the world's most power-dense* power converter, rated at 136kW/L, or eight times more power dense than conventional converters. The new technology is expected to contribute to the downsizing of power electronics equipment.

1.2kV & 1.7kV Gen5 Trench Gate M1 IGBT Modules The DIM450M1HS12-PB500, DIM600M1HS12-PC500 and DIM450M1HS17-PA500 are trench, insulated gate bipolar transistor (IGBT) modules with enhanced field stop and implantation technology. The IGBT modules have a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. The M1 modules are designed to scale 152 x 62 x 11mm, and weigh 345g. The modules have a chip Junction temperature operating range from -40°C to a maximum of 150°C. Suitable for applications within the electric vehicle, industrial, renewable and traction markets. The modules incorporate an electrically isolated base plate and low inductance construction enabling circuit designers to optimize circuit layouts and utilize grounded heat sinks for safety.

Large bandgap energy and high field breakdown are two primary characteristics of silicon carbide (SiC) which have been leveraged to create a new generation of power semiconductors with zero reverse recovery charge, significantly lower switching losses and the opportunity for higher temperature operation.

Wakefield-Vette produces a line of DC axial fans used on fan heat sinks which are generally used on heatsinks to support BGAs, VGAs and CPU coolers or as chassis fans. The fans range in size from 30x10mm to 120x38mm with the most common sizes in between. The fans are available in 12 volt as the most common, but other voltages (5, 24 and 48) are possible upon request. The standard configurations include 2 wire, 3 wire (tach) or 4 wire (PWM) and can be customized to support any range of connectors