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Measuring range up to 3× primary nominal (450 A pk measured for the 150 A nominal model (LZSR 150-P/SP1) 100, 150 & 200 A nominal models PCB mounting ASIC based Closed Loop Hall effect technology Low offset drift up to 3 ppm/K of VREF(7 times better than previous generation of C/L Hall Effect current transducers working with traditional Hall effect chip). Exceptional compact size for all ranges (37.75 × 48.2 × 19.4mm)
Clinton Parts plans on closing their doors by the end of 2019. With more than 80 man-years supporting Clinton Parts Kenny and Paul are ready to retire. May you guys have a relaxing new chapter ahead – one where you will have unlimited time enjoying your life. Happy Retirement!
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990. The chip structure also evolved from a flat planar structure to a trench gate structure, and the CSTBT™ (Mitsubishi Electric's unique IGBT that makes use of the carrier cumulative effect) has enabled low loss and smaller size for industrial equipment. From the 5th generation IGBT, the lineup has included composite products*1 with a thin profile (NX type) in addition to the former external shape (standard type). From the S series (6th generation IGBT), there has been additionally offered the T/T1 series (7th generation IGBT), with low power loss and smaller size. Incorporates an inverter, 3-phase converter and brake circuit in a single package
Littelfuse Introduces 650V SiC Schottky Diodes with New Package Sizes, Current Ratings from 6A to 40A Perfect for enhancing efficiency, reliability and thermal management in power electronics applications