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Darrah offers Isolated SCR Modules featuring standard dual SCR modules witg integral water cooled bases. Our improved design has eliminated thermal barriers associated with separate cooling bases. This product line features industry standard dual SCR modules with integral water cooled bases. Our improved design has eliminated thermal barriers associated with separate cooling bases. This has increased current ratings by as much as 15%. In addition, because the Q20008 water connections are directly tapped to the module base, water leaks are virtually eliminated. To further enhance water integrity, each unit is 100% pressure tested at 150 PSI for one minute.
Rectifier diodes are split into two sub-classes: Normal recovery diodes and avalanche diodes. Rectifier diodes are generally used for conversion of AC (alternating current) to DC (direct current). Normal recovery diodes are optimized with respect to low conduction losses and are able to handle very large currents. Avalanche diodes are self-protected against transient over-voltages.
Darrah’s Portable De-excitation and Crowbar Tester for Static Exciters Avoid Costly Down Time Be confident that your overvoltage and safety circuits are protecting your Thyristor Bridges and Generator Field Insulation. Darrah’s Model DX5K-115A tester is designed to test solid state crowbar and de-excitation modules. The portable tester is used to verify the crowbar and de-excitation voltage protection levels.
Medium voltage 3 Phase AC Switch Up to 4160V –400A - AC Switch Using industry proven Enerpro Fiber Optic MV Firing board with Zero Cross/Phase Control Option Isolated Voltage and Current feedback providing RS485/Modbus communication to your control system or PLC Fiber Optic temperature measurements for Power Assemblies for complete isolation. Available with RS485 or 4-20mA feedback. Designed for ease of maintenance and serviceability Simple installation into your cabinet
SKAI®3LV MOSFET Inverter System up to 55kVA Ultra Compact MOSFET Inverter Platform SKAI 3 LV is the 3rd generation of industrial MOSFET inverters and constitutes the 7th generation of MOSFET inverter technology manufactured by SEMIKRON, with more than 1.5 Million MOSFET inverters in the field. The 3rd generation is a platform concept that offers standard design versions or can be customized to meet your needs. The converter connects easily to a customer control board for quick and easy designing, while leaving the control to the customer.
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has a proven record of providing low current and low withstanding voltage in power devices that require high-speed switching, voltage driving and low loss. The use of a trench gate structure, enabled by submicron technology, radically reduces the low on-resistance (the resistance value in the region where the drain current flows between the drain and the source) compared to a planar structure.
The new group brand identity aims to improve LEM’s visibility and clearly define the LEM story for customers, suppliers, associates and employees. The logo has been refreshed and includes a tag line which reflects LEM’s “Life, Energy, Motion” strapline.
SUR/FIN is where leading surface technology companies connect, collaborate and contribute. It is the primary conference and trade show dedicated specifically to the surface technology industry. And because it is the only conference and trade show sponsored by the National Association for Surface Finishing (NASF)—representing the $28 billion finishing industry—it attracts noted business leaders and prominent thinkers to a forum where relevant issues are addressed and technologies presented.
Dynex IGBT Modules The acclaimed DIM (IGBT High-Power Modules) are robust and work with high reliability at any temperature condition from -40/-50°C up to +150°C. They are offered in a range of 500A to 3600A at 1200V to 6.5kV, which enables them to function in different circuit topologies (half bridge, single switch and chopper) in various high power inverter power ratings.
Production of GTOs started in the mid 1980s. A GTO is a thyristor that can be turned off by applying a current to the gate in the reverse direction to that required to turn it on.
The generation 7 IGBTs represent the latest IGBT chip technology. This new generation is specifically designed to match the requirements of motor drive applications. The IGBTs come with a significantly lower forward voltage drop and deliver optimized switching performance. Thanks to roughly 25% smaller chips, higher nominal currents can fit into existing power module packages.
Measuring range up to 3× primary nominal (450 A pk measured for the 150 A nominal model (LZSR 150-P/SP1) 100, 150 & 200 A nominal models PCB mounting ASIC based Closed Loop Hall effect technology Low offset drift up to 3 ppm/K of VREF(7 times better than previous generation of C/L Hall Effect current transducers working with traditional Hall effect chip). Exceptional compact size for all ranges (37.75 × 48.2 × 19.4mm)