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Asymmetric GTOs are divided in two categories: Buffer layer and Standard. Buffer layer GTOs have exceptionally low on-state and dynamic losses. Fine pattern types (5SGF) are optimized for fast switching and transparent emitter (5SGT) for low on-state losses. The Standard GTOs have excellent trade-off between on-state and switching losses.
Mitsubishi Electric Corporation announced the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses. The LV100 package, which achieves high versatility and high current density, has been used widely in railway and electric power applications and now has been adapted for industrial uses. It is expected to help reduce the size and power loss of power converters, specifically inverters used for renewable energy applications such as photovoltaic and wind-power generation, and also high-capacity motor drives.
High performance three phase current sensor +/-1500A. Suitable for high power motor control and inverter applications, with high integration.
StakPak is a family of high power insulated gate bipolar transistor (IGBT) press-packs and diodes in an advanced modular housing that guarantees uniform chip pressure in multiple-device stacks.Although the most common package for IGBTs is the isolated module, for applications requiring series connection, press-packs are preferred because of the ease with which they can be connected electrically and mechanically in series and because of their inherent ability to conduct in the shorted state – an essential feature where redundancy is required. Since IGBTs feature multiple parallel chips, there is a challenge - with conventional press-packs - in assuring uniform pressure on all chips. ABB has solved this problem with a patented spring technology.
The 867A GTO Thyristor, DG646BH25 is among our highest performing and reliable traditional bipolar devices. The device is designed with high voltage and high surge current capabilities, manufactured in our H outline package. This robust device has been a part of Dynex’s long-standing GTO history that are designed to provide both high quality and reliable parts for the maintenance market that exists due to long service life of traction equipment. The DG646BH25 has a turn-off capability that contributes to the reduction in equipment size and weight in addition to, low noise emission to reduce acoustic cladding necessary for environmental requirements. This device has an inherent fast turn-on however, is primarily designed to turn off high current making it useful in PWM and chopper circuits. End user applications can benefit from reduced system cost, improved thermal characteristics, maximized system efficiency and reliable operation in severe environments.
This unit contains 8 individual 12 pulse 700 amp 150 volt DC rectifier assemblies. Fed by a single 900 KVA transformer, these 8 rectifiers are all individually controlled for supplying power to 8 separate sodium hypochlorite generating stations. These produce liquid chlorine bleach and liquid swimming pool chlorine in large bulk quantities.
Wakefield-Vette’s unique slim and powerful DC blowers are perfect for ultra-thin cooling applications, where cooling is a must. The Slim-Line blower features an ultra-thin blade design resulting in excellent performance & sound quality. The Slim-Line Blower three-phase motor design provides exceptional balancing characteristics and low power consumption. Designed for tablets, notebooks, automotive, gaming monitors, all in one PC’s, or any other low-profile application, these powerful, ultra-thin, direct-diverting blowers can be as thin as 3.2mm
Power supply systems for air conditioners, PV(Photovoltaic) power system, xEV charging infrastructure, on-board charger. Power loss is reduced by approx. 21% compared to silicon (Si) products, contributing to energy conversion The SiC-SBD allows high frequency switching and contributes to downsizing the reactor, heat sink and other peripheral components JBS structure allows high forward surge capability and contributes to improving reliability
The DIM1000H1HS17-PA500 is a H1 half bridge generation 5 trench gate IGBT module, with insulated gate bipolar transistor (IGBT), enhanced field stop and implantation technology. The 1000A 1700V IGBT module has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. The H1 package outline are designed to scale 250mm x 89mm and weigh 1200g. The module has a chip junction temperature operating range from -40°C to a maximum of 150°C. Suitable for applications within the industrial, renewable, power grid and traction markets. The module incorporates an electrically isolated base plate and low inductance construction, enabling circuit designers to optimize circuit layouts and utilize grounded heat sinks for safety. The IGBT has a high reliability soldering system and solder layer uniformity control technology to strengthen thermal cycling capability. In addition, the product offers ultrasonic terminal welding technology with low impedance, large load capacity and strong resistance to mechanical shock.
MAIN CHARACTERISTICS: Isolated measurement of nominal AC & DC voltage of 1000 V, Compact: 131.6 cm3 total volume, Saving in terms of space: 29 x 51 x 89 mm, Panel mounting, Light: 57 g, Robust, Isolation amplifier technology, High level of overall accuracy over temperature range: 1.7 % and Fast response time: 12 to 17 us at 90%