- Showing 1–10 of 141 items
Dynex Flat Base Rectifier Diodes range from 3000V to 6000V at current ratings of 412A to 860A.FEATURES - Low losses for high efficiency - Hermetically sealed for long operational life - Easily mounted down with 4 M8 bolts on 46mm centres - Available with flying lead, full and half bar connections on request - Available anode to base and cathode to base - Selections available for parallel operation
Darrah Electric Company offers a wide variety of Semiconductor assemblies from standard off the shelf to completely custom solutions. In many cases, if complete assemblies are not available in stock, components are available for quick solutions and delivery. Find a standard or custom heat sink assembly in our full line for all common circuit configurations, including Diode/Rectifier, Thyristor/SCR, and IGBT circuits. Our experience with our product lines and the products we distribute allow us to offer practical and economical solutions to our customers so you can find the perfect heat sink assembly for your specific needs. Darrah engineering provides full 3D assembly drawings along with thermal calculations with our quotations. All heat sink assemblies are 100% tested prior to shipping. Full load testing with thermal data capture is available upon request for prototype or production products.
Hitachi ABB Power Grids’ diode and thyristor modules feature industry standard housings and very low losses together with the highest operating temperatures. They provide the ultimate in reliability and are the epitome of quality. Whether efficiently driving industrial motors, smoothly accelerating fans and pumps, or supply power to demanding applications.
Mitsubishi Electric to Launch HV100 dual type X-Series HVIGBT Modules For extra powerful and efficient inverter systems in railways, electric power systems and more Mitsubishi Electric announced the coming launch of two new HV100 dual type X-Series HVIGBT modules for higher power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. The modules achieve industry-leading* dual type 600A current ratings with 10kVrms isolation voltage, believed to be unmatched among silicon HVIGBT modules rated at 3.3kV.
Darrah Electric Co provides various ratings and configurations of DC test fixtures to suit your requirements.
Powerex manufactures a wide range of disc and stud discrete thyristors/Silicon Controlled Rectifiers (SCRs).
LEM's ITZ 600-24000 Rack mounted (fix gain or programmable) current transducers. Made for ultra high accuracy. MAIN CHARACTERISTICS: 14 models, DC&AC isolated nominal current measurement: from 40 to 24000 ADC, Excellent linearity, from 1 to 10 ppm, High resolution, Initial offset: < 2 ppm, Very low offset drift: from 0.1 to 0.6 ppm/K, Overall accuracy @ IPN @ +25°C: between < +/- 3 ppm and < 12 ppm and Wide frequency bandwidth from DC up to 500 kHz (+/- 3 dB)
The DCR590G65 Phase Control Thyristor is one of our most efficient and dependable high-power Bipolar devices. The device is designed with high surge current capabilities and manufactured in our G outline package. In addition, the device has a chip junction temperature that works reliably within an operating range from -40°C to a maximum of 125°C. The device’s characteristics are well suited for use in the soft starter applications with electric motors. Operating at line frequencies where switching losses are small, the low conduction losses of DCR590G65 enables increased system efficiency. This product offers a number of benefits for end-user applications inclusive of; reduced system cost, improved thermal characteristics, maximized system efficiency and reliable operation in variable environments.
Asymmetric GTOs are divided in two categories: Buffer layer and Standard. Buffer layer GTOs have exceptionally low on-state and dynamic losses. Fine pattern types (5SGF) are optimized for fast switching and transparent emitter (5SGT) for low on-state losses. The Standard GTOs have excellent trade-off between on-state and switching losses.
Mitsubishi Electric Corporation announced the launch of its LV100-type T-series insulated-gate bipolar transistor (IGBT) module for industrial uses. The LV100 package, which achieves high versatility and high current density, has been used widely in railway and electric power applications and now has been adapted for industrial uses. It is expected to help reduce the size and power loss of power converters, specifically inverters used for renewable energy applications such as photovoltaic and wind-power generation, and also high-capacity motor drives.