1.7kV Gen5 Trench Gate H1 IGBT Module
The DIM1000H1HS17-PA500 is a H1 half bridge generation 5 trench gate IGBT module, with insulated gate bipolar transistor (IGBT), enhanced field stop and implantation technology.
The 1000A 1700V IGBT module has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.
The H1 package outline are designed to scale 250mm x 89mm and weigh 1200g.
The module has a chip junction temperature operating range from -40°C to a maximum of 150°C.
Suitable for applications within the industrial, renewable, power grid and traction markets.
The module incorporates an electrically isolated base plate and low inductance construction, enabling circuit designers to optimize circuit layouts and utilize grounded heat sinks for safety.
The IGBT has a high reliability soldering system and solder layer uniformity control technology to strengthen thermal cycling capability. In addition, the product offers ultrasonic terminal welding technology with low impedance, large load capacity and strong resistance to mechanical shock.
Trench Gate IGBT
Cu Base with Al2O3 Substrates
10µs Short Circuit Withstand
High Power Converters
Renewable Energy Power Conversion
High Reliability Inverters
The Power line range of high-power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A.