Mitsubishi Electric 4-terminal N-series 1200V SiC-MOSFETs
Mitsubishi’s N-series of 1200V SiC-MOSFETs in a TO-247-4 package, 1 which achieves 30% less switching loss compared to the existing TO-247-3 package2 products. The new series will help to reduce the power consumption and physical size of power-supply systems requiring high-voltage conversion, such as electric vehicle (EV) onboard chargers and photovoltaic power systems.
1) Four-pin package helps reduce power consumption and physical size of power-supply systems
- SiC-MOSFET chip with good figure of merit (FOM3) of 1,450mΩ-nC and high self-turn-on tolerance is
mounted on TO-247-4 package, which is equipped with independent driver source terminal as well as
conventional 3-pin package.
- Adopts four-pin package to reduce parasitic inductance, a problem in high-speed switching.
Eliminating gate-source voltage drops due to current variations helps to reduce switching loss by
approximately 30% compared with TO-247-3 products.
- Using a higher carrier frequency4 to drive the new power semiconductors helps to reduce switching-power
loss, enabling smaller and simpler cooling systems as well as smaller reactors and other peripheral
components, thereby helping to reduce the power consumption and physical size of overall power-supply
3 Performance index of power MOSFETs, calculated by multiplying on-resistance by gate-drain charge (100°C junction
temperature). Smaller values indicate better performance.
4 Frequency that determines the ON/OFF timing of switching element in inverter circuit
2) Six models for diverse applications, including AEC-Q101 compliant models
- New lineup includes models compatible with Automotive Electronics Council's AEC-Q101 standards
for use not only in industrial applications, e.g. photovoltaic systems, but also EV applications.
- Creepage distance (shortest distance over surface between two conductive parts) between drain
terminal and source terminal made wider than in TO-247-3 package products for more flexible
application, including in outdoor installations where dust and dirt easily accumulate
In the face of rising demands for energy savings and environmental awareness, SiC power semiconductors are attracting increasing attention due to their potential to significantly reduce power loss. Mitsubishi Electric, since commercializing its first power module incorporating silicon-carbide Schottky-barrier diodes (SiC-SBD) and SiC-MOSFETs in 2010, has continued to contribute to the size reduction and energy efficiency of inverter systems for home appliances, industrial equipment and railway locomotive systems.
Note: Development of these SiC products have been partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
|Size||15.9 × 41.0 × 5.0mm||15.9 × 41.0 × 5.0mm||15.9 × 41.0 × 5.0mm|
These products are compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU and (EU)2015/863.