MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has a proven record of providing low current and low withstanding voltage in power devices that require high-speed switching, voltage driving and low loss. The use of a trench gate structure, enabled by submicron technology, radically reduces the low on-resistance (the resistance value in the region where the drain current flows between the drain and the source) compared to a planar structure.
• MOSFET chip with a trench gate structure
• Uses a connector terminal for gate source signal wiring
• Built-in temperature sensor
• Complies with the RoHS directive
Power MOSFET Modules A series
|Type Number||Data Sheet||VDSS(V)||ID(A)||Configuration||Viso(Vrms)|
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