IXFR48N50Q
Amps: 40
Volts: 500
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Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance (<30pF)
IXYS advanced low Qg process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS)
Fast intrinsic diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
- Amps : 40
- Volts : 500
