DIM450M1HS17-PA500 Half Bridge IGBT Module
FEATURES
• Trench Gate IGBT
• Cu Base with Enhanced Al2O3 Substrates
• 10µs Short Circuit Withstand
APPLICATIONS
• Motor Drives
• Power Charging Equipment
• Reactive Compensation
• High Reliability Inverters
KEY PARAMETERS
VCES 1700V
VCE(sat) * (typ) 1.80V
IC (max) 450A
IC(RM) (max) 900A
