Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Low Drive Power
Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy Heat Sinking
- Amps : 150
- Volts : 600